MBE Components, Dopant Cells
Doping Cells
 Doping Effusion Cell DEZ |
 Dual DopingSource DDS |
 Phosphorus Doping SourceDECO-D |
 Silicon Doping Source SUSI-D |
 Carbon DopingSource SUKO-D |
 Electron Beam Boron Doping SourceEBVV-B |
Select doping cell by dopant material:
| Bulkmaterial | Dopant | Type | Source | Comment |
| GaAs / AlGaAs | Si | n | DEZ | |
| Si | n | SUSI-D | high mobility doping, fast switching | |
| Te | n | DEZ | GaTe source material, T=700°C -> 1019cm-3 | |
| Be | p | DEZ | ||
| C | p | SUKO-D | high mobility p-type doping | |
| Si / SiGe | Sb | n | DEZ | segregation effect |
| As | n | DEZ | high segregation effect in MBE | |
| P | n | DECO-D | GaP source material, T=700°C -> 1019cm-3 | |
| B | p | HTS | ||
| B | p | EBVV-B | extremely high Boron doping levels | |
| Ga | p | DEZ | ||
| Al | p | DEZ | segregates in MBE | |
| Er | opt. | DEZ | used for light emission | |
| GaN / GaInN | Si | n | DEZ | |
| Si | n | SUSI | long filament lifetime / Si flux option | |
| Mg | p | DEZ | ||
| Zn | p | DEZ | high activation energy | |
| GaP / GaAsP | S | n | OME, valved source | please contact us |
| Te | n | DEZ | use GaTe as source material | |
| Zn | p | DEZ | ||
| SiC | N | n | plasma source | please contact us |
| Al | p | DEZ | ||
| ZnO | B | n | HTS | |
| N | p | plasma source | please contact us | |
| ZnSe | I | n | valved source | valved source / please contact us |
| ZnCl2 | n | gas injector | valved source / please contact us | |
| N | p | plasma source | please contact us | |
| CdTe | Al | n | DEZ | |
| Cu | p | DEZ | ||
| Sb | p | DEZ | ||
| Other | Fe | HTEZ | ||
| Cr | HTEZ | |||
| Cu | DEZ |
