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VACS 63-300, valved arsenic cracker on DN63 CF (O.D. 4.5") mounting flange (using a VADP 100-63 adapter) with 300 cm³ crucible, cooling shroud and motor drive |
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The Valved Arsenic Cracker Source VACS is designed for high performance growth of III-V materials. |
Motorized Valve Control Unit MVCU with motor drive |
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The special design allows an easy refilling of the crucible from the backside without removing the cell from the chamber. This simplifies your maintenance work and saves your time. |
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The design of the valve mechanism is schematically illustrated on the right side. It provides a large cross section opening which allows very good pumping of the As reservoir. The robust wide angle valve design effectively elimitates the chance of locking, which is a frequently observed problem for needle valves.
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Schematic illustration of the VACS valve design |
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Application |
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BEP vs. time, with valve on and off (cell temp. 390°C / cracker temp. 600°C). |
SIMS of GaInP on GaAs buffer layer on (100) GaAs substrate with VACS and VGCS applied |
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Very sharp transitions of As are achieved by application of VACS and VGCS sources at one deposition run. 300nm GaInP are deposited on a GaAs buffer layer on a (100) GaAs substrate. Due to the fast flux control properties of the valve unit the As concentration in the GaInP layer is at its detection limit, i.e. three orders of magnitude below the GaAs level, which is demonstrated by the top right SIMS measurement. In return, P is sharply reduced on the GaInP/GaAs interface. |
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Technical Data
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Dimensions (VACS 100-300 with VADP adapter)
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Specific Data For general information on CF mounting flanges see "Flange and Gasket Dimensions".
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LAST UPDATE: FEBRUARY, 2007 |
© 2003 Dr. Eberl MBE-Komponenten GmbH |
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