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EBVV-B 63-5, vertical e-beam evaporator with 5 cm³ hearth volume, mounted on DN63 (O.D.4.5") CF-flange

• Up to 10²¹ Boron doping in Si-MBE
• Evaporation of elemental Boron or Si-B alloy in vertical e-beam evaporator
• Small dimensions; can be used in DN63CF(O.D.4.5'') effusion cell ports
• Hearth volume 5cm³
• Optimized for SiGe MBE with Si shielding parts
• Long filament lifetime
• Easy maintenance
• 270° beam deflection
• High frequency x-y-beam deflection system

The Vertical Electron Beam Evaporator EBVV-B 63-5 allows to introduce real e-beam evaporation into your MBE system that has originally been designed for effusion cells only.
The unique and extremely compact design permits to install the EBVV-B 63 instead of an ordinary effusion cell on any MBE system having CF63 ports with an I.D. >=60mm. Even tilted ports can be used. Despite its small footprint, the new EBVV-B 63-5 includes a complete electromagnetic x- and y- dynamic beam detection system and can deliver beam powers up to 3kW.
Only UHV-grade materials are used without any compromise, especially for hot parts: molybdenum emitter block, tungsten filament and Al₂O₃ ceramics. The copper body is manufactured from OFHC (Oxygen-Free High-Conductivity)-copper. The copper hearth has a volume of 5 cm³ (O.D. 23 mm, taper 12° and 15mm depth) and is closely surrounded by a complete turn of a water channel for effective cooling.
The 270° beam deflection design of the electron emitter eliminates nearly all ion bombardment on the lament due to a sharply bent electron beam path near the beam exit aperture. Thus, the filament is well shielded from evaporant or charged particles ejected from the crucible

SIMS profile of a B-doped Si MBE layer on Si-substrate

Application

EBVV-B 63-5 filled with high purity Si-B charge in operation

The small dimensions and the vertical evaporator design open the path to a new range of applications.
The EBVV-B 63-5 allows high purity evaporation of elemental boron or Si-B alloy with high deposition rates up to one µm/h. Consequently, it allows Si and SiGe MBE growth of highest Boron doped epi-layers with Boron concentrations up to 10²¹/ccm. This concept is applied in Si/SiGe HBTs or Si based Esaki-Diodes with record peak-to valley ratio and current density. The SIMS profile above shows a 275nm Si layer with high Boron doping.

Special feature of the EBVV-B

The EBVV 63-5-B is equipped with a specially adapted set of shielding parts manufactured from high-purity single crystalline Silicon. A Si plate and a ring cover all parts of the metallic body that are potentially subject to electron or ion bombardment and that face the substrate. Only this Si-shielding allows the growth of highest purity Boron doped Si and SiGe films. We also supply high purity Si-B source material in superior quality. It is machined and pre-conditioned from wafer-grade Sisingle crystals and high purity Boron, fitting the evaporator hearth.

Set of silicon shielding parts for EBVV-B 63-5,

EBVV-B 63-5 equipped with Si shielding parts

Dimensions

Technical Data

 LAST UPDATE: FEBRUARY, 2006

© 2003 Dr. Eberl MBE-Komponenten GmbH