| HOME I PRODUCTS I NEWS I ABOUT US I CONTACT I JOBS I SITEMAP |
| DOPANT SOURCES |
| EZ I DCS I DECO-D I SUSI I SUKO-D I EBVV-B |
Dual Dopant Source for Si and Be on one DN63 CF flange, |
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Dopant Sources provide a convenient method for adding MBE deposition capabilities into your UHV chamber or your MBE system. Because of the large variety of different UHV systems, each cluster is individually designed for our customer's system. |
Double Cluster Source for Si and Be doping |
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A double mini effusion cell cluster with 2 x 5.6 cm³ PBN crucibles and one rotary motion shutter are mounted on a DN40 CF (O.D. 2.75") flange. |
Double MEZ Cluster Source on DN40 CF flange |
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The double MEZ cluster source with 2 x 5.6 cm³ PBN crucibles shown on the right is mounted on a DN63 CF (O.D. 4.5") flange. It is equipped with a special water cooling between the two mini effusion cells and with a rotary motion shutter for each cell. |
Double MEZ Cluster Source on DN63 CF flange |
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The combination of a mini high temperature effusion cell HTEZ and a standard effusion cell WEZ, mounted on a DN63 CF (O.D. 4.5") flange is shown in the picture nearby. |
Mixed Cell Cluster Source on DN63 CF flange |
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Two single standard effusion cells WEZ, with a 10 cm³ PBN crucible in each cell, are mounted in an angled position to allow the use of a vertically oriented mounting flange. Each cell is equipped with an individual linear shutter. |
Vertically mounted Cluster on DN100 CF flange |
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LAST UPDATE: NOVEMBER, 2004 |
© 2003 Dr. Eberl MBE-Komponenten GmbH |
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