MBE-Komponenten will be exhibiting at the ICSNN 2012 conference on Supperlattices, Nanostructures and Nanodevices in Dresden from July 23-25, 2012.

MBE-Komponenten GmbH attends the physics exhibition during the DPG spring conference 2012 (March 27-29, Regensburg). We are looking forward to meeting you at our booth.

From October 17-20 we will for the first time attend the exhibition at the V2011 workshop week in Dresden. We are looking forward to there presenting our products to industrial partners.

The German MBE Workshop for Molecular Beam Epitaxy (DMBE 2011) will take place in Berlin on the 5th + 6th of October. As a sponsor & exhibitor of this workshop we would like to invite you to meet us there.

Please visit the booths of MBE-Komponenten and our USA distributor UMC at the 28th North American Molecular Beam Epitaxy Conference August 14-17, 2011 in San Diego, CA.

In order to present our novel and innovative products to our European customers, we take the opportunity to exhibit at the E-MRS 2011 Spring Meeting in Nice, France (May 10-12, 2011).

Passionate skiers among the MBE community are certainly going to visit the 16th European Molecular Beam Epitaxy Workshop held from March 21-23, 2011 in Alpe d'Huez (F). We too look forward to this event and will be happy to welcome you at our booth.

In August 22-27, 2010 the 16th International Conference on Molecular Beam Epitaxy will be held in Berlin. We appreciate the opportunity to welcome the MBE community in our home country's capital.

We would like to invite you to visit our booth at the 2010 MRS Spring Meeting in San Francisco, California (Exhibit April 6-8, 2010).

The German MBE Workshop for Molecular Beam Epitaxy 2009 will take place at the Ruhr-Universität Bochum from Sept. 30th to Oct. 1st. Participating in this workshop as a sponsor we would like to invite you to meet us there.

MARCH-2009:
CIGS production cells with high throughput and long-term Se resistance, dedicated to solar cell thin film deposition, are now available. Key benefits are beam shaping inserts for high material efficiency and defect reducing indirect Cu evaporation, as well as a fully serviceable design.

FEBRUARY-2008:
At the request of many customers for a small but nonetheless complete RTA oven the Compact Rapid Thermal Annealing System AO 500 has been reissued. Its applications are RTA processing, ohmic contact formation and diffusion processes at operating temperatures up to 500°C.

MAY-2007:
MBE-Komponenten delivered the first new generation Hg source to the Fraunhofer Institute for Applied Solid-State Physics in Freiburg. The HGS is designed for II-VI Hg MBE, e.g. production of MCT devices. The use of three separate heater-circuits provides excellent long-term flux control and temperature stability.

JUL-2006:
The new Oxygen Atom Beam Source OBS enlarges our program of gas sources. The OBS produces an ion-free atomic oxygen beam for use in various atomic oxygen applications, e.g. surface oxidation, oxide layer deposition or surface science.

DEC-2005:
The Si-shielded Vertical Electron E-Beam Evaporator EBVV-B allows Boron-doping up to 10²¹/ccm. It is optimized for the evaporation of Si-B alloy or high-purity Boron source material in Si/SiGe MBE with high deposition rates up to one µm/h.

APRIL-2005:
Dr. Eberl MBE-Komponenten has redesigned its Carbon Sublimation Source SUKO in collaboration with Prof. Wegscheider of the University of Regensburg (Germany). The new SUKO-D represents the next generation of C-doping sources, providing minimized heat load and long filament lifetime.

AUG-2004:
The In-situ Etching System - ISES - is a fully UHV and MBE compatible gas source system for AsBr3 in-situ etching. The etching mechanism provides atomic layer precise manipulation of thin films and nanostructures. A new system with a second etching material option was installed at Naval Reseach Lab.