We exhibit at the 15th International Conference on Molecular Beam Epitaxy (August 3-8, 2008 University of British Columbia, Vancouver, Canada), together with United Mineral & Chemical, our North American distribution partner.

The 14th International Conference on Solid Films and Surfaces ICSFS-14 will be held June 29 - July 4, 2008 in Dublin (Ireland). Please take the opportunity to have a look at our latest products by visiting our booth.

We would like to invite you to visit our booth at the 2008 MRS Spring Meeting in San Francisco, California (Exihition March 25th-27th, 2008).

MBE-Komponenten GmbH attends the physics exhibition during the 2008 DPG spring meeting of the Condensed Matter division (February 25-29 in Berlin). We are looking forward to meet you at our booth.

The Deutscher MBE-Workshop 2007 will take place in Jülich, North Rhine-Westphalia, on 1st + 2nd of October. We will attend the workshop as a sponsor and would like to invite you to meet us there.

Please visit the booth of MBE-Komponenten or that of our USA distributor UMC at the 25th North American Molecular Beam Epitaxy Conference September 23-26, 2007 Albuquerque, New Mexico.

On 2-6 July 2007 the joint congress IVC17/ICSS13 & ICN+T2007 will take place in Stockholm, Sweden. MBE-Komponenten is going to attend this congress and would like to invite you to meet us there.

We would like to invite you to visit our booth at the 14th European Molecular Beam Epitaxy Workshop 5th-7th March 2007 at Sierra Nevada, Granada (Spain).

FEBRUARY-2008:
At the request of many customers for a small but nonetheless complete RTA oven the Compact Rapid Thermal Annealing System AO 500 has been reissued. Its applications are RTA processing, ohmic contact formation and diffusion processes at operating temperatures up to 500°C.

MAY-2007:
MBE-Komponenten delivered the first new generation Hg source to the Fraunhofer Institute for Applied Solid-State Physics in Freiburg. The HGS is designed for II-VI Hg MBE, e.g. production of MCT devices. The use of three separate heater-circuits provides excellent long-term flux control and temperature stability.

JUL-2006:
The new Oxygen Atom Beam Source OBS enlarges our program of gas sources. The OBS produces an ion-free atomic oxygen beam for use in various atomic oxygen applications, e.g. surface oxidation, oxide layer deposition or surface science.

DEC-2005:
The Si-shielded Vertical Electron E-Beam Evaporator EBVV-B allows Boron-doping up to 10²¹/ccm. It is optimized for the evaporation of Si-B alloy or high-purity Boron source material in Si/SiGe MBE with high deposition rates up to one µm/h.

APRIL-2005:
Dr. Eberl MBE-Komponenten has redesigned its Carbon Sublimation Source SUKO in collaboration with Prof. Wegscheider of the University of Regensburg (Germany). The new SUKO-D represents the next generation of C-doping sources, providing minimized heat load and long filament lifetime.

AUG-2004:
The In-situ Etching System - ISES - is a fully UHV and MBE compatible gas source system for AsBr3 in-situ etching. The etching mechanism provides atomic layer precise manipulation of thin films and nanostructures. A new system with a second etching material option was installed at Naval Reseach Lab.

MAR-2004: Compact Effusion Cells for thin film deposition or MBE in reseach UHV Systems are available. The Compact Effusion Cells includes water cooling and shutter on DN40CF (O.D. 2.75''). Precise temperature measurement and control produces very stable and reproducible growth rates.