Overall MBE-Komponenten GmbH has delivered MBE systems, components and services to more than 300 customers worldwide.

1. Technical University of Munich, Walter Schottky Institute, Munich
2. Max Planck Institute for Solid State Research, Service Group Molecular Beam Epitaxy, Stuttgart
3. University of Würzburg, Physical Institute, Würzburg
4. Technical University of Berlin, Institute of Solid State Physics, Berlin
5. University of Regensburg, Institute of Experimental and Applied Physics, Regensburg
6. Technical University of Braunschweig, Institute for High Frequency Technology, Braunschweig
7. Infineon Technologies AG, Solid State Physics Department, Munich
8. University of Karlsruhe, Institute of Applied Physics, Karlsruhe
9. University of Hanover, Institute for Semiconductor Devices and Electronic Materials, Hanover
10. Research Center Jülich, Institute of Thin Films and Interfaces (ISG), Jülich
11. Center of Advanced European Studies And Research (caesar), Thin Adaptive Films, Bonn

Customer References in Europe

1. IMEC Interuniversity MicroElectronics Center, Magneto-Electronics Group, Leuven (B)
2. Imperial College London, Department of Physics, London (GB)
3. University of Warwick, Department of Physics, Coventry (GB)
4. CNRS National Centre for Scientific Research, Lab. for Photonics and Nanostructures, Marcoussis (F)
5. UMR-CNRS, Institute for Electronics, Microelectronics and Nanotechnology (IEMN), Villeneuve d'Ascq (F)
6. Avanex France (former ALCATEL Optronics), Front End Manufacturing, Nozay (F)
7. Russian Academy of Sciences, A.F. Ioffe Physico-Technical Institute, St. Petersburg (RUS)
8. Polish Academy of Sciences, Institute of Physics, Warsaw (PL)
9. Technical University of Delft, Faculty of Applied Sciences, Delft (NL)
10. Chalmers University of Technology, Department of Experimental Physics, Göteborg (S)
11. Universitat Autonoma de Barcelona, Institut de Ciencia de Materials de Barcelona, Bellaterra (E)
12. Trinity College, SFI Trinity Nanoscience Laboratory, Dublin (IRL)
13. Academy of Sciences of the Czech Republic, Institute of Physics, Prague (CZ)
14. Johannes Kepler University Linz, Institute of Semiconductor and Solid State Physics, Linz (A)
15. Paul Scherrer Institute (PSI), Laboratory for Micro- and Nanotechnology, Villigen (CH)
16. Swiss Federal Institute of Technology (ETH) Zurich, Laboratory for Solid State Physics, Zurich (CH)
17. University of Modena and Reggio Emilia, Department of Physics, Modena (I)

Customer References in North America

1. University of California Los Angeles, Electrical Engineering Department, Los Angeles, CA
2. University of California Santa Barbara, Dept. of Electrical and Computer Engineering, Santa Barbara, CA
3. University of Delaware, Electrical and Computer Engineering Department, Newark, DE
4. Stanford University, Department of Electrical Engineering, Stanford, CA
5. University of North Texas, Electrical Engineering and Physics, Richardson, TX
6. University of Tennessee, Department of Physics & Astronomy, Knoxville, TN
7. The Pennsylvania State University, Materials Science & Engineering, University Park, PA
8. Naval Research Laboratory, Si MBE Growth and Characterization Section, Washington, DC
9. Lucent Technologies Bell Laboratories, Murray Hill, NJ
10. IBM Thomas J. Watson Research Center, Physical Sciences Department, Yorktown Heights, NY

Customer References in Asia and Australia

1. The University of Tokyo, Research Center for Advanced Science and Technology (RCAST), Tokyo (JAP)
2. AIST, Photonics Research Institute, Tsukuba, Ibaraki (JAP)
3. Osaka University, Institute of Scientific and Industrial Research, Ibaraki, Osaka (JAP)
4. Hong Kong University of Science & Technology, Department of Physics, Kowloon, Hong Kong (CN)
5. Fudan University, Surface Phy. Lab (National Key Lab.), MBE Group, Shanghai (CN)
6. The University of New South Wales, Centre for Quantum Computer Technology, Sydney, NSW (AUS)

Some publications based on samples grown with SUSI

1. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
   L. Oberbeck, N.J. Curson, M.Y. Simmons, R. Brenner, A.R. Hamilton, S.R. Schofield; Appl. Physics Letters 82, 17 (2002)
2. Comparison of P and Sb as n-dopants for Si molecular beam epitaxy
   J.F. Nützel and G. Abstreiter; Journal of Applied Physics 78, 937-940 (1995)
3. Microscopic symmetry properties of (001) Si/Ge monolayer superlattices
   K. Eberl, W. Wegscheider, R. Schorer, G. Abstreiter; Physical Review B-Condensed Matter, (1991) 43, 6, pp. 5188-5191
4. Group-IV element (Si, Ge and alpha-Sn) superlattices - low-temperature MBE
   K. Eberl, W. Wegscheider, G. Abstreiter; Journal of Crystal Growth (1991) vol. 111, no. 1-4, pp. 882-888
5. Transmission electron-microscopy of short-period Si/Ge strained-layer superlattices on Ge substrates
   W. Wegscheider, K. Eberl, H. Cerva, H. Oppolzer; Appl. Physics Letters (1989) vol. 55, no. 5, pp. 448-450

Some publications based on samples grown with SUKO

Publications about C-doping in III/V MBE are:

1. Carbon doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 10 6 cm 2 /Vs
   C. Gerl, S. Schmult, H.-P. Tranitz, C. Mitzkus, W. Wegscheider; to be published in Appl.Phys.Letters 2005
2. 1.3 µm GaInAsN Laserdiodes with improved High Temperature Performance
   M. Fischer, D. Gollub, A. Forchel; Jpn.J.Appl.Phys.Vol.41 (2002)pp 1162-1163
3. Near-Band-Edge Photoluminescence from Pseudomorphic Si 1-y C y /Si Quantum Well Structures
   K. Brunner, K. Eberl, W. Winter; Physical Review Letters (1996) Vol 76,2
4. Heavy carbon doping of GaAs grown by solid source molecular--beam epitaxy
   C. Cianni, A. Fischer, C. Lange, K. Ploog and L. Tapfer; Appl.Phys.Lett.(1992)61,2 pp 183
5. Growth and strain compensation effects in the ternary Si 1-x-y Ge x C y alloy system
   K. Eberl, S.S. Iyer, S. Zollner, J.C. Tsang, F.K. Legoues; Appl.physics letters,(1992)60
6. Synthesis of Si 1--y C y alloys by molecular-beam epitaxy
   S.S. Iyer, K. Eberl, M.S. Goorsky, F.K. Legoues, J.C. Tsang, F. Cardone; Appl.physics letters,(1992)60,3,pp.356

Publications about the preparation of Si1-xCx and Si1-x-yGexCy alloys on Si are:

1. S.S. Iyer et al., Appl. Phys. Lett. 60, 359 (1992).
2. K. Eberl et al., Appl. Phys. Lett. 60, 3033 (1992).
3. K. Eberl et al., J. V. S. Techn. B10, 934 (1992).
4. K. Eberl et al., Appl. Phys. Lett. 64, 739 (1994).
5. H. J. Osten, et al., Appl. Phys. Lett. (1994) / MBE Conf. 1994 Osaka
6. K. Brunner et al., Phys.Rev.Lett. 72,303(1996)
7. K. Brunner et al., Phys.Blätter 52,1237(1996)
8. Photolum. of tensile strained, exactly strain compensated, and compressively strained Si1-x-y Gex Cy Layers on Si
   O.G. Schmidt, K. Eberl; Physical Review Letters (13 April 1998) vol.80, no.15, p.3396-9.

Reference for Phosphorus Source DECO

1. Growth of high-quality InGaP and application for modulation-doped structure by molecular beam epitaxy with a GaP source
   T. Shitara, K. Eberl, J. Dickmann, C. Wölk; Journal of Crystal Growth 150 (1995) 1261-1265
2. MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
   H. Künzel, J. Böttcher, P. Harde, R. Maessen; Journal of Crystal Growth 175/176 (1997) 940-944
3. Nanoscale InP islands embedded in InGaP; A. Kurtenbach et al.; Appl.Phys.Lett.69,361 (1996)
4. Optical gain and lasing in self-assembled In/GaInP quantum dots; A. Moritz et al.; Appl.Phys.Lett.69(2),212,(1996)
5. Heavy phosphorus doping in mbe grown silicon with a GaP decomposition source; G. Lippert et al.; Appl.Phys.66 (23)3197 (1995)
6. P-delta-doping in Si MBE; C. Tolksdorf, I. Eisele,Uni-BW Munich; to be published
7. The InP (001)(2x1)Surface:A hydrogen terminated structure; W.G. Schmidt et al.; Phys.Rev.Lett.90,126101 (2003)

Publications about P-doping in Si MBE:

1. G. Lippert et al.; Appl. Phys. Lett. 66, 3197(1995)
2. R. Duschel, O.G. Schmidt, G. Reitemann, E. Kasper, K. Eberl; Electronics Letters 35, 1111(1999)
3. P-delta-doping in Si MBE; C. Tolksdorf, I. Eisele, Uni-BW Munich; to be published (2002)

Some publications based on samples grown with ISES

1. The effect of surface reconstruction on the surface morphology during in-situ etching
   M. Ritz, T. Kaneko, K. Eberl; Appl.Phys. Lett. 71, 695 (1997)
2. Size modification of self-assembled InAs quantum dots by in-situ etching
   H. Schuler, N.Y. Jin-Phillipp, F. Phillipp, K. Eberl; Semiconductor Science and Technol. 13, 1341 (1998)
3. Atomic layer in-situ etching and MBE-regrowth
   K. Eberl, M. Lipinski, H. Schuler; J CRYST GROWTH 202: 568-573 (May 1999)
4. Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching
   H. Schuler and K. Eberl; Microelectronics Journal 30, 341 (1999)
5. In-situ etching and regrowth in III/V MBE for future nanotechnology
   H. Schuler, M. Keller, M. Lipinski, K. Eberl, J. Weis, K. v. Klitzing; J. Vac. Sci. Technol 15: (2) 169-177 (Feb 2000)
6. Systematic growth studies of narrow constrictions formed by molecular beam epitaxy on…
   M. Lipinski, H. Schuler, P. Veit, K.. Eberl; MAT SCI ENG B-SOLID 74: (1-3) 25-31 (May 1 2000)
7. In situ etching and regrowth in III-V molecular beam epitaxy for future nanotechnology
   H. Schuler, M. Keller, M. Lipinski, K. Eberl; J. Vac. Sci. Technol B 18: (3) 1557-1561 (May-Jun 2000)
8. In situ etching with AsBr3 and regrowth in molecular beam epitaxy
   H. Schuler, T. Kaneko, M. Lipinski and K. Eberl; Semicond. Sci. Technol. 15, 169 (2000)
9. Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching
   S. Kiravittaya, R. Songmuang, N.Y. Jin-Phillipp, S. Panyakeow, O.G. Schmidt; J.Cryst Growth 251: 258-263 (2003)
10. Formation of lateral quantum dot molecules around self-assembled nanoholes
    R. Songmuang, S. Kiravittaya, O.G. Schmidt; APL 82 No.17: 2892-2894 (2003)

Please ask for a list of users reference on our MBE products, for example effusion cells, manipulators, etc.

 LAST UPDATE: JUNE, 2005

© 2003 Dr. Eberl MBE-Komponenten GmbH