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What means MBE?
MBE stands for Molecular Beam Epitaxy.
MBE is a method of depositing layers of materials with atomic thicknesses on to substrates.
A gaseous 'beam' of particles, i.e. molecules or single atoms, of a material is created by means of evaporation sources (effusion cells, sublimation sources, etc.).
This beam impinges on to a substrate resulting in layers that take on a lattice structure and orientation identical to those of the substrate ('epitaxial growth' of monocrystalline films).
These so called 'superlattices' have a number of technologically important uses including quantum well lasers for semiconducting systems, and giant magneto-resistance for metallic systems.
For a more detailed description of the idea behind MBE and the various applications of MBE grown samples see the Wikipedia articles
http://en.wikipedia.org/wiki/Molecular_beam_epitaxy (in English), or
http://de.wikipedia.org/wiki/Molekularstrahlepitaxie (in German).
What is UHV?
All our products are especially designed to be solely operated under vacuum conditions.
A vacuum regime of a pressure lower than 10-9 mbar characterizes Ultra High Vacuum (UHV).
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